IMT3AT108

$0.36

Description：TRANS 2PNP DUAL 50V 150MA SMT6
Series：-

SKU:9d0f6920a15e Category: Bipolar Transistor Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP DUAL 50V 150MA SMT6
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：150mA
Voltage - Collector Emitter Breakdown (Max)：50V
Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
Power - Max：300mW
Frequency - Transition：140MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-74, SOT-457
Supplier Device Package：SMT6
Grade：-
Qualification：-

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IMT3AT108

Overview

The IMT3AT108 is a dual PNP bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per transistor. The device operates within a power dissipation limit of 300mW and includes an integrated transition frequency of 140MHz. DC current gain ranges from a minimum of 120 to a maximum of 560 at specified test conditions. It utilizes an SMT6 surface-mount package, corresponding to the SOT-457 or SC-74 form factor, designed for compact circuit integration.

Feature Summary

Dual PNP configuration in a single compact surface-mount package
Integrated high-frequency performance suitable for signal processing
High DC current gain for efficient switching applications

Applications

General-purpose switching circuits
Signal amplification stages
Logic interface drivers

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Ensure storage conditions adhere to manufacturer specifications to maintain reliability. Validate package markings against official documentation before installation.

Selection Notes

Evaluate thermal management requirements against the 300mW power dissipation limit. Compare hFE characteristics with circuit design targets. Consider the SOT-457 footprint compatibility during PCB layout. Assess operating temperature range constraints for the specific application environment.

Part Context

This component belongs to the IMT series of dual PNP transistors. It shares similar electrical characteristics with other members like the IMT1AT108 but may differ in specific packaging or suffix variations. The series is designed for general-purpose electronic applications requiring compact dual-transistor solutions.

Replacement Considerations

The IMZ2A is listed as a similar specification part. Verify pinout compatibility and electrical parameters before substitution. Check if the replacement meets all original design constraints.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.