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The IMX1T110 is a dual NPN bipolar junction transistor manufactured by ROHM Semiconductor. It integrates two independent 2SC2412K transistor chips within a single SMT6 (SOT-457) surface-mount package. The device supports a maximum collector current of 150 mA and offers a collector-emitter breakdown voltage of 50 V, with a collector-base voltage rating of 60 V. Key electrical characteristics include a transition frequency of 180 MHz and a minimum DC current gain of 120 at specified test conditions. Power dissipation is rated at 150 mW, and the component operates at temperatures up to +150°C.
This component belongs to the IMX series of general-purpose dual transistors from ROHM. It serves as a surface-mount alternative to through-hole dual transistor packages, designed for automated assembly using EMT3, UMT3, or SMT3 mounting machines. The internal architecture utilizes two separate chips to prevent interference between elements.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official ROHM resources for qualified alternatives if this specific part number is discontinued or unavailable.