IMX3T108

IMX3T108

  • Description:TRANS 2NPN DUAL 50V 150MA SMT6
  • Series:-

SKU:dc178c3bb8c5 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 150MA SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:300mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6
  • Grade:-
  • Qualification:-

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IMX3T108

Overview

The IMX3T108 is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It is housed in an SOT-457 (SMT6) surface-mount package with six terminals. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. Key electrical specifications include a DC current gain (hFE) ranging from 120 to 560 at 1 mA and 6 V, a transition frequency (fT) of 180 MHz, and a power dissipation (Pd) of 300 mW. The maximum operating temperature is +150°C.

Feature Summary

  • Dual NPN configuration within a compact SOT-457 surface-mount package for space-constrained designs.
  • High DC current gain range supporting efficient switching and amplification applications.
  • Robust thermal performance with a maximum junction temperature rating of +150°C.

Applications

  • General-purpose switching circuits requiring dual NPN logic or signal processing.
  • Low-power amplifier stages in consumer electronics.
  • Interface circuits in industrial control systems.

Procurement Notes

Verify the current supply status before design finalization, as this component is classified as Not Recommended for New Designs (NRND). Confirm that existing inventory levels meet project requirements, since future production may be limited. Ensure compatibility with the SOT-457 footprint during PCB layout validation. Check RoHS compliance documentation for specific regulatory needs.

Selection Notes

Select this component when a dual NPN configuration is required in a small surface-mount form factor. The 50 V VCEO and 150 mA IC ratings suit low-to-medium power applications. Consider the 180 MHz fT for moderate-speed switching. Evaluate the NRND status against long-term product lifecycle requirements. Compare hFE ranges to ensure sufficient gain margin for the intended circuit topology.

Part Context

The IMX3T108 belongs to the IMX3 series of complex transistors from ROHM Semiconductor. It serves as a dual NPN alternative to single discrete transistors, reducing board space. Similar parts in the family include the IMX2T108, which shares identical electrical characteristics but may differ in packaging or availability status. This series targets cost-sensitive and space-efficient electronic designs.

Replacement Considerations

The IMX2T108 is listed as a similar specification part with identical electrical parameters. Verify pinout compatibility and package dimensions before substitution. Check if the replacement part maintains the same NRND status or offers improved availability. Ensure thermal and electrical ratings match the original design constraints.

IMX3T108IMX3T108

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