IMX8T108

Overview

The IMX8T108 is a dual NPN bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector-emitter voltage of 120V and a continuous collector current of 50mA. The device operates with a transition frequency of 140MHz and supports a maximum power dissipation of 300mW. Packaged in an SMT6 (SC-74, SOT-457) surface-mount configuration, it functions within a junction temperature range up to 150°C.

Feature Summary

• Dual NPN configuration for compact circuit integration
• High voltage capability suitable for demanding applications
• Surface-mount design for automated assembly

Applications

• General-purpose switching circuits
• Signal amplification stages
• Logic interface drivers

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific order matches the IMX8T108 designation, as variations exist within the series. Check datasheet revisions for any updates to electrical characteristics or mechanical dimensions prior to final procurement decisions.

Selection Notes

Select this component when high voltage isolation is required alongside low current switching capabilities. Ensure thermal management strategies account for the 300mW power dissipation limit in the SOT-457 package. Compare against lower voltage alternatives if system requirements do not necessitate the 120V rating.

Part Context

This part belongs to the IMX series of dual NPN transistor arrays from Rohm Semiconductor. It shares the SOT-457 footprint with other variants like the IMX3T108 but differs significantly in voltage ratings. The series provides standardized solutions for dual-transistor needs in space-constrained designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical specifications before considering alternative manufacturers.