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IMZA120R030M1HXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SIC DISCRETE. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IMZA120R030M1HXKSA1
- Description：SIC DISCRETE
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V, 18V
- Rds On (Max) @ Id, Vgs：40.9mOhm @ 25.6A, 18V
- Vgs(th) (Max) @ Id：5.2V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs：68 nC @ 18 V
- Vgs (Max)：+20V, -7V
- Input Capacitance (Ciss) (Max) @ Vds：2160 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：273W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO247-4-U02
- Package / Case：TO-247-4
Single FETs, MOSFETs datasheet and documents for IMZA120R030M1HXKSA1
Single FETs, MOSFETs Overview
The Infineon IMZA120R030M1HXKSA1 is a CoolSiC™ 1200 V SiC Trench MOSFET utilizing .XT interconnection technology in a TO-247-4 package. It features a drain-source voltage of 1200 V, a continuous DC drain current of 70 A at 25°C case temperature, and an on-state resistance of 30 mΩ at 18 V gate drive. The device supports a short-circuit withstand time of 3 µs and operates within a junction temperature range of -55°C to 175°C.
Single FETs, MOSFETs Feature Summary
- Utilizes .XT interconnection technology for optimized thermal performance
- Features robust body diode characteristics suitable for hard commutation applications
- Demonstrates high immunity to parasitic turn-on with zero volt turn-off capability
- Includes Kelvin sense contact for precise gate drive control
Single FETs, MOSFETs Applications
- General purpose drives (GPD)
- EV Charging systems
- Online UPS and Industrial UPS
- String inverters
- Solar power optimizers
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix KSA1 against official Infineon documentation to confirm packaging details and compliance certifications. Ensure that the procurement channel provides valid traceability for industrial-grade components. Cross-reference the datasheet revision history to confirm the latest technical specifications are being supplied.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring low switching losses and high reliability in harsh environments. Consider the 3 µs short-circuit withstand time for protection circuit design. Evaluate the thermal resistance values to determine appropriate heatsinking requirements for the target application's duty cycle and ambient conditions.
Single FETs, MOSFETs Part Context
This part belongs to the CoolSiC™ 1200 V SiC Trench MOSFET family from Infineon Technologies. It represents an advancement in silicon carbide power semiconductors designed for high-efficiency energy conversion. The series integrates advanced trench gate technology to minimize conduction and switching losses compared to previous generations.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Verify pinout compatibility and electrical parameter overlaps before replacing existing designs.
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