IMZA75R060M1HXKSA1

Single FETs, MOSFETs Overview

The IMZA75R060M1HXKSA1 is a CoolSiC™ Power Device 750 V G1 N-channel MOSFET in a PG-TO247-4 package. It features a drain-source voltage (VDSS) of 750 V, typical on-state resistance (RDS(on)) of 60 mΩ at VGS=18V, and maximum RDS(on) of 78 mΩ. The continuous DC drain current (IDDC) is 32 A at TC=25°C. Total gate charge (QG) is typically 23 nC. Peak drain current (IDM) reaches 89 A. Operating junction temperature ranges from -55°C to +175°C. Thermal resistance junction-to-case (Rth(j-c)) is 1.04 °C/W.

Single FETs, MOSFETs Feature Summary

• Highly robust 750 V technology with 100% avalanche testing
• Best-in-class RDS(on) x Qfr product combination
• Excellent RDS(on) x Qoss and RDS(on) x QG efficiency metrics
• Unique combination of low Crss/Ciss capacitance and high VGS(th)

Single FETs, MOSFETs Applications

• EV charging infrastructure
• Solar PV inverters
• UPS (uninterruptable power supplies)
• Energy storage and battery formation
• Telecom and Server SMPS

Single FETs, MOSFETs Procurement Notes

Verify the component status as NRND (Not Recommended for New Designs) before procurement. Confirm that the source and driver source pins are not exchangeable to prevent malfunction. Ensure compliance with JEDEC qualification standards for industrial applications. Check for specific RoHS details if required by your manufacturing process.

Single FETs, MOSFETs Selection Notes

Select this device for high-temperature and harsh operation environments requiring simplified deployment of high system efficiency. Consider its suitability for bus voltages beyond 500 V where enhanced robustness is critical. Evaluate its performance in hard switching for superior efficiency or soft switching topologies for higher frequencies.

Single FETs, MOSFETs Part Context

This component belongs to the Infineon CoolSiC™ 750 V G1 family. It utilizes silicon carbide material characteristics developed over more than 20 years. The device is fully qualified according to JEDEC for industrial applications. It represents a solid silicon carbide technology offering a unique combination of performance, reliability, and ease of use.

Single FETs, MOSFETs Replacement Considerations

IMZA75R060M1HXTMA1 is a tape-and-reel version of the same die and specifications within the PG-TO247-4 package. Verify pinout compatibility and thermal characteristics when substituting packaging types.