IPA028N08N3GXKSA1

Description：MOSFET N-CH 80V 89A TO220-FP
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tube

SKU:1444060b481e Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPA028N08N3GXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 80V 89A TO220-FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPA028N08N3GXKSA1

Description：MOSFET N-CH 80V 89A TO220-FP
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：2.8mOhm @ 89A, 10V
Vgs(th) (Max) @ Id：3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs：206 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14200 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：42W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-FP
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IPA028N08N3GXKSA1

IPA028N08N3GXKSA1

Single FETs, MOSFETs Overview

The IPA028N08N3GXKSA1 is an N-channel enhancement mode power MOSFET from Infineon's OptiMOS 3 series. It features a PG-TO-220-FP package with a maximum drain-source voltage of 80 V and a continuous drain current of 89 A at 25 °C. The device exhibits a typical on-resistance of 2.4 mΩ at VGS=10 V and ID=89 A, alongside a total gate charge of 155 nC. It supports junction temperatures up to 175 °C and includes avalanche testing.

Single FETs, MOSFETs Feature Summary

Optimized for high-frequency switching and synchronous rectification applications
Features excellent gate charge versus on-resistance figure of merit
Includes 100% avalanche testing for enhanced reliability

Single FETs, MOSFETs Applications

DC/DC converters
High frequency switching circuits
Synchronous rectification

Single FETs, MOSFETs Procurement Notes

Verify the component authenticity by checking the marking code '028N08N' against official Infineon documentation. Confirm the package type matches the PG-TO-220-FP specification. Ensure compliance with RoHS standards and halogen-free requirements as stated in the datasheet. Cross-reference the ordering suffix XKSA1 with manufacturer records to confirm packaging details.

Single FETs, MOSFETs Selection Notes

Select this component when designing DC/DC converters requiring low conduction losses and high efficiency. The 80 V rating suits specific voltage levels within power supply architectures. Consider the thermal resistance of 3.6 K/W for heat dissipation planning. Evaluate the gate charge characteristics for driving circuit compatibility in high-speed switching environments.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family, designed for optimized performance in power conversion. It utilizes silicon technology for robust operation across a wide temperature range. The component is intended for surface mount installation using the TO-220FP variant package, providing a balance between electrical performance and thermal management capabilities.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains the 80 V breakdown voltage and comparable on-resistance values. Verify that alternative packages support similar thermal dissipation requirements.