IPB014N06NATMA1

$3.70

Description：MOSFET N-CH 60V 34A/180A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:12f12d312840 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB014N06NATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 34A/180A TO263-7. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB014N06NATMA1

Description：MOSFET N-CH 60V 34A/180A TO263-7
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：2.8V @ 143µA
Gate Charge (Qg) (Max) @ Vgs：106 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：7800 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3W (Ta), 214W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Single FETs, MOSFETs datasheet and documents for IPB014N06NATMA1

IPB014N06NATMA1

Single FETs, MOSFETs Overview

The IPB014N06NATMA1 is an OptiMOS power transistor featuring a TO-263-7 package. It operates with a drain-source voltage of 60 V and supports continuous drain currents up to 180 A at 25 °C case temperature. The maximum on-state resistance is 1.4 mΩ at 100 A, while the total gate charge reaches 106 nC. Avalanche energy capability is rated at 420 mJ, and thermal resistance from junction to case is 0.7 K/W.

Single FETs, MOSFETs Feature Summary

Optimized for synchronous rectification applications
100% avalanche tested for robustness
Superior thermal resistance characteristics

Single FETs, MOSFETs Applications

Synchronous rectification circuits
Power switching systems requiring high current handling
Industrial power conversion modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking '014N06N' against official Infineon documentation. Confirm that the package type matches the specified TO-263-7 outline dimensions. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high continuous current capacity within a 60 V system. The low on-state resistance minimizes conduction losses during operation. Consider the thermal resistance values to ensure adequate heat dissipation solutions are implemented for the intended operating environment.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS family of power transistors manufactured by Infineon Technologies. It utilizes silicon technology optimized for efficiency and reliability. The specific model designation indicates its electrical ratings and packaging configuration within the broader product portfolio.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Do not assume compatibility based solely on similar pin configurations or voltage ratings without verifying electrical parameters.