IPB014N08NM6ATMA1

IPB014N08NM6ATMA1

$2.52
  • Description:TRENCH 40<-<100V
  • Series:-

SKU:243fcb7edbf3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRENCH 40<-<100V
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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IPB014N08NM6ATMA1

Overview

The IPB014N08NM6ATMA1 is an N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 6 series. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a drain-source voltage of 80 V, a continuous drain current of 169 A, and a maximum on-state resistance of 14 mOhms. The device supports a gate-source voltage range of -20 V to 20 V with a threshold voltage of 2.2 V. It operates within a temperature range of -55 C to +175 C, dissipating up to 150 W of power.

Feature Summary

  • Enhancement mode operation for efficient switching control
  • OptiMOS 6 technology optimized for low conduction losses
  • Robust thermal performance in standard surface-mount packages

Applications

  • DC-DC converter circuits
  • Motor control systems
  • Power supply output stages

Procurement Notes

Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the OptiMOS 6 series designation rather than generic Trench technologies. Cross-reference datasheet revisions to validate thermal characteristics and pinout configurations before integration into final designs.

Selection Notes

Select this component when high current handling at 80 V is required with minimal conduction loss. The TO-263-3 package offers a balance between thermal dissipation and PCB space efficiency. Consider the 169 A current rating for applications demanding robust load handling in compact power modules.

Part Context

This part belongs to the OptiMOS 6 family, representing advanced silicon MOSFET technology from Infineon. It is designed for general-purpose power switching applications where efficiency and thermal management are critical. The product line targets industrial and automotive power electronics requiring reliable performance under varying load conditions.

Replacement Considerations

Check for direct substitutes within the OptiMOS 6 series or compatible Trench MOSFETs with matching voltage and current ratings. Verify package compatibility and thermal resistance values to ensure equivalent performance in existing board layouts.

IPB014N08NM6ATMA1IPB014N08NM6ATMA1
$2.52
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