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The IPB014N08NM6ATMA1 is an N-channel power MOSFET from Infineon Technologies, belonging to the OptiMOS 6 series. It utilizes silicon technology and features a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a drain-source voltage of 80 V, a continuous drain current of 169 A, and a maximum on-state resistance of 14 mOhms. The device supports a gate-source voltage range of -20 V to 20 V with a threshold voltage of 2.2 V. It operates within a temperature range of -55 C to +175 C, dissipating up to 150 W of power.
Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the OptiMOS 6 series designation rather than generic Trench technologies. Cross-reference datasheet revisions to validate thermal characteristics and pinout configurations before integration into final designs.
Select this component when high current handling at 80 V is required with minimal conduction loss. The TO-263-3 package offers a balance between thermal dissipation and PCB space efficiency. Consider the 169 A current rating for applications demanding robust load handling in compact power modules.
This part belongs to the OptiMOS 6 family, representing advanced silicon MOSFET technology from Infineon. It is designed for general-purpose power switching applications where efficiency and thermal management are critical. The product line targets industrial and automotive power electronics requiring reliable performance under varying load conditions.
Check for direct substitutes within the OptiMOS 6 series or compatible Trench MOSFETs with matching voltage and current ratings. Verify package compatibility and thermal resistance values to ensure equivalent performance in existing board layouts.