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IPB052N04NGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 70A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB052N04NGATMA1
- Description：MOSFET N-CH 40V 70A D2PAK
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：5.2mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id：4V @ 33µA
- Gate Charge (Qg) (Max) @ Vgs：42 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：79W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB052N04NGATMA1
Single FETs, MOSFETs Overview
The IPB052N04NGATMA1 is a single-channel N-channel power MOSFET manufactured by Infineon Technologies. It utilizes Trenchstop technology and is housed in a PG-TO263-7 (D2PAK) surface-mount package. The device features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 70 A at case temperature. Its on-state resistance is specified at 5.2 mΩ, with a gate-source threshold voltage of approximately 2 V to 4 V. The component operates within a junction temperature range of -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- Integrates Trenchstop technology for optimized switching performance and low conduction losses.
- Designed for high-current applications with a 70 A continuous drain current rating.
- Features a robust PG-TO263-7 package suitable for efficient thermal management.
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power supply units
Single FETs, MOSFETs Procurement Notes
Verify the obsolete status of this part number before procurement planning. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any substitute components meet the original electrical specifications and pinout requirements. Validate RoHS compliance and packaging details against specific project needs. Review datasheet revisions for any parameter updates prior to final design integration.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 40 V N-channel switching with high current capacity. The 5.2 mΩ on-resistance offers efficiency benefits in low-voltage applications. Consider the PG-TO263-7 package for its thermal performance in space-constrained layouts. Evaluate the obsolete status when determining long-term product lifecycle support and sourcing strategies.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's portfolio of Trenchstop MOSFETs, which combine fast switching capabilities with low on-state resistance. The PG-TO263-7 package provides a balance between power handling and mounting flexibility. It is designed for general-purpose power switching applications where efficiency and reliability are critical.
Single FETs, MOSFETs Replacement Considerations
The IRF1404STRLPBF is listed as an available substitute. Verify compatibility regarding pin configuration, thermal characteristics, and electrical parameters before implementation.
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