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IPB095N20NM6ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IPB095N20NM6ATMA1. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB095N20NM6ATMA1
- Description：IPB095N20NM6ATMA1
- Series：OptiMOS™ 6
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V, 15V
- Rds On (Max) @ Id, Vgs：8.7mOhm @ 62A, 15V
- Vgs(th) (Max) @ Id：4.5V @ 186µA
- Gate Charge (Qg) (Max) @ Vgs：66 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5500 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：3.8W (Ta), 300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-U01
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB095N20NM6ATMA1
Single FETs, MOSFETs Overview
The IPB095N20NM6ATMA1 is an N-Channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 6 technology. It features a 200 V drain-source voltage rating and a low on-resistance of 8.7 mOhms at 10V gate drive. The device supports continuous drain currents of 13 A at case temperature and 116 A at 25°C ambient conditions. Packaged in a PG-TO263-3-U01 surface-mount format, it offers high power dissipation capabilities up to 300 W under thermal case conditions.
Single FETs, MOSFETs Feature Summary
- OptiMOS 6 technology for optimized switching performance
- Low on-resistance for reduced conduction losses
- Robust packaging for high thermal efficiency
Single FETs, MOSFETs Applications
- Automotive Ethernet PHY applications
- In-vehicle networking systems
- General power conversion circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant, as sources indicate both TO-263-7 and PG-TO263-3-U01 configurations. Confirm RoHS compliance status through official manufacturer documentation. Ensure the ordering suffix matches the required tape-and-reel or cut-tape specification for your assembly line requirements.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring 200 V blocking capability with moderate current handling. The OptiMOS 6 generation provides a balance between conduction and switching losses. Consider the thermal management requirements given the distinct ratings for case versus ambient temperature operation when designing the heat sink interface.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 6 family of silicon power transistors designed for automotive and industrial applications. It represents a newer generation compared to older NM6 series parts, offering improved figure-of-merit characteristics within similar voltage classes.
Single FETs, MOSFETs Replacement Considerations
IPF129N20NM6ATMA1 and IPB095N20NM6ATMA1 are related variants within the same technology family. Verify pinout compatibility and exact Rds(on) tolerances before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
