IPB09N03LA G

Description：MOSFET N-CH 25V 50A TO263-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:cf319eb2b3c6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB09N03LA G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 50A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB09N03LA G

Description：MOSFET N-CH 25V 50A TO263-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：8.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：13 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1642 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：63W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB09N03LA G

IPB09N03LA G

Single FETs, MOSFETs Overview

The IPB09N03LA G is an OptiMOS®2 N-channel power MOSFET in a PG-TO263-3-2 package. It features a 25 V drain-source voltage and a continuous drain current of 50 A at Tc=25 °C. The maximum on-resistance is 8.9 mΩ at VGS=10 V and 15.1 mΩ at VGS=4.5 V. Gate threshold voltage ranges from 1.2 V to 2 V. Total gate charge is typically 10 nC at VGS=10 V. Power dissipation reaches 63 W at Tc=25 °C, with a junction-to-case thermal resistance of 2.4 K/W. Operating temperature spans -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability for direct microcontroller interfacing
High-frequency switching optimized through low gate charge and fast transition times
Superior thermal performance with low junction-to-case thermal resistance
dv/dt rated reverse diode for robust operation in hard-switching applications

Single FETs, MOSFETs Applications

High-frequency DC/DC converters
Synchronous rectification in power supplies
Low-voltage motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the component marking '09N03LA' against the datasheet to confirm authenticity. Ensure the package matches the PG-TO263-3-2 outline dimensions. Confirm that the sourcing channel provides original manufacturer documentation. Check for RoHS compliance status if required by specific manufacturing standards.

Single FETs, MOSFETs Selection Notes

Select this component when a 25 V rating is sufficient and logic-level gate drive is required. Compare the 8.9 mΩ RDS(on) against system conduction loss requirements. Evaluate the 2.4 K/W thermal resistance against available PCB cooling areas. Consider the 50 A continuous current limit relative to peak load demands.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS®2 family, designed for low-voltage power switching. It utilizes planar technology to achieve high power density. The PG-TO263-3-2 package facilitates surface-mount assembly while providing a thermal pad for heat dissipation. It serves as a standard solution for 24 V and 12 V bus architectures.