IPB180N10S403ATMA1

Single FETs, MOSFETs Overview

The IPB180N10S4-03 is an N-channel, normal level, enhancement mode OptiMOS-T2 power transistor manufactured by Infineon Technologies. It features a PG-TO263-7-3 package and supports a maximum drain-source voltage of 100 V with a continuous drain current of 180 A at 25°C case temperature. The device exhibits a typical on-state resistance of 2.7 mΩ at VGS=10V and ID=100A. It operates within a junction temperature range of -55°C to +175°C and has a thermal resistance from junction to case of 0.6 K/W.

Single FETs, MOSFETs Feature Summary

• OptiMOS-T2 technology providing low on-state resistance for high efficiency
• Qualified for automotive applications under AEC-Q101 standards
• Capable of handling single pulse avalanche energy up to 530 mJ
• Designed for surface mount installation with MSL1 moisture sensitivity rating

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-current DC-DC converter stages
• Motor control circuits requiring robust switching performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets the necessary automotive quality standards if deployed in regulated environments. Ensure proper thermal management solutions are integrated into the design to maintain junction temperatures within the specified operational limits during high-load conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities combined with low conduction losses. The 100 V rating makes it suitable for 48 V automotive architectures or industrial bus systems. Evaluate the gate charge requirements against the driving capability of the intended controller to ensure optimal switching speeds and minimize dynamic losses during operation.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS-T2 family of power transistors designed for robust performance in demanding environments. The series integrates advanced trench gate technology to achieve superior figure-of-merit characteristics compared to previous generations. It serves as a critical switching element in modern power electronics where reliability and thermal stability are paramount.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the PG-TO263-7-3 footprint and electrical ratings. Verify pinout compatibility and thermal resistance specifications to ensure equivalent heat dissipation performance without modifying the existing printed circuit board layout.