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IPB65R110CFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 31.2A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB65R110CFDATMA1
- Description：MOSFET N-CH 650V 31.2A D2PAK
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：31.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：110mOhm @ 12.7A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1.3mA
- Gate Charge (Qg) (Max) @ Vgs：118 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3240 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：277.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB65R110CFDATMA1
Single FETs, MOSFETs Overview
The IPB65R110CFDATMA1 is a single N-channel CoolMOS CFDA power MOSFET manufactured by Infineon Technologies. It utilizes advanced superjunction technology to achieve low on-resistance and high switching efficiency. The device features a maximum drain-source voltage of 650 V and a continuous drain current of 31.2 A at 25°C, with a pulsed current capability of 99.6 A. The typical gate charge is 118 nC at 10 V. It operates within an extended junction temperature range from -55°C to +175°C and is housed in a D2PAK (TO-263-3) surface-mount package.
Single FETs, MOSFETs Feature Summary
- Advanced superjunction technology for optimized conduction and switching losses
- Automotive qualification compliant with AEC-Q101 standards
- High thermal performance with low junction-to-case thermal resistance
- Enhanced ruggedness against negative transient voltage spikes
Single FETs, MOSFETs Applications
- Automotive DC/DC converters
- On-board charger systems
- Industrial motor drives
- High-efficiency power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'ATMA1' against official Infineon documentation to confirm tape-and-reel packaging and automotive grade status. Ensure compatibility with standard D2PAK footprints during PCB layout. Confirm RoHS compliance and REACH SVHC declarations via the manufacturer's latest datasheet before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high voltage blocking capabilities combined with low conduction losses in a compact surface-mount form factor. The CoolMOS CFDA series is suitable for applications demanding improved efficiency over previous generations. Consider the thermal management requirements associated with the D2PAK package and the specified maximum power dissipation limits under your operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon CoolMOS CFDA family, which represents a generation of superjunction MOSFETs designed for high-voltage applications. The 'IPB' prefix indicates a surface-mount N-channel device, while 'CFDA' denotes the specific technology node offering enhanced performance characteristics compared to earlier CFD or CFS variants within the same voltage class.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible replacements within the same package and electrical specifications should be sourced from the official Infineon CoolMOS CFDA product portfolio. Verify that any substitute maintains identical AEC-Q101 qualification and thermal resistance parameters.
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