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IPB80N06S207ATMA4 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 80A TO263-3. Review the specifications below when checking this part for your BOM.
The IPB80N06S207ATMA4 is an N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 55V drain-source voltage rating and a continuous drain current of 80A at 25°C. The device offers a maximum on-resistance of 5.6mΩ at 10V gate drive. Packaged in SOT404 (TO-263-3), it supports a junction temperature range from -55°C to +175°C with a power dissipation capacity of 250W.
Verify the specific suffix ATMA4 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard TO-263 footprints during PCB layout. Cross-reference thermal resistance values with the latest datasheet revision to account for potential updates in testing conditions or package variations.
Select this component for applications requiring high current handling within low-voltage systems. The 5.6mΩ on-resistance balances conduction losses with switching efficiency. Consider the SOT404 package for surface-mount assembly where space constraints exist but adequate copper area is available for heat dissipation.
This part belongs to the OptiMOS family of silicon power transistors designed for general-purpose switching. It represents a mature product line offering reliable performance in industrial and consumer electronics. The designation indicates specific manufacturing lot and packaging attributes defined by Infineon's internal coding standards.
Consult official substitution guides for equivalent parts such as IPP80N06S2-07 or IPB80N06S2H5ATMA2. Verify pinout compatibility and thermal characteristics before implementation.
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