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IPB80N06S2L09ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 80A TO263-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPB80N06S2L09ATMA2
- Description：MOSFET N-CH 55V 80A TO263-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：8.2mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id：2V @ 125µA
- Gate Charge (Qg) (Max) @ Vgs：105 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2620 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：190W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3-2
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IPB80N06S2L09ATMA2
Single FETs, MOSFETs Overview
The IPB80N06S2L-09 is an N-channel OptiMOS power transistor with a 55 V drain-source breakdown voltage and a maximum continuous drain current of 80 A at 25 °C. It features an ultra-low on-state resistance of 8.3 mΩ at VGS=10 V and operates within a junction temperature range of -55 °C to +175 °C. The device is automotive AEC-Q101 qualified, offers 100% avalanche testing, and utilizes a PG-TO263-3-2 surface-mount package.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Logic-level enhancement mode operation for efficient gate drive
- Robust thermal performance with high single-pulse avalanche energy capability
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- Low-side switching applications in vehicle electronics
- General-purpose power control circuits requiring high reliability
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code SP0002-18743 against the required package variant. Confirm that the component meets the intended environmental specifications for the target application. Ensure compatibility with the assembly process regarding lead-free requirements and moisture sensitivity level classifications during procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high current handling in a compact surface-mount format. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate charge parameters to ensure the driving circuitry can support the required switching speeds efficiently.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS family, designed for low-voltage power switching applications. It represents a generation of trench MOSFET technology optimized for automotive environments, balancing conduction losses with switching performance in standard industry packages.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative OptiMOS devices with similar RDS(on) and current ratings. Verify pinout compatibility and package dimensions before substituting. Ensure any replacement maintains the same automotive qualification status if required by the system design.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
