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IPD050N03LGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 50A TO252-3. Review the specifications below when checking this part for your BOM.
The IPD050N03LGATMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a DPAK-3 (TO-252-3) surface-mount package and operates with a drain-source voltage of 30 V and a continuous drain current of 50 A. The device exhibits a maximum on-resistance of 4.2 mOhms at 10 V gate drive. Key electrical parameters include a gate charge of 31 nC, threshold voltage of 1 V, and power dissipation of 68 W. It supports an operating temperature range from -55 °C to +175 °C.
Verify the component status as NRND (Not Recommended for New Designs) before initiating procurement. Confirm that existing inventory or last-time buys align with long-term production plans. Ensure compatibility with DPAK-3 footprints during design validation. Cross-reference datasheet revisions to confirm parameter consistency.
Select this component for designs prioritizing low conduction losses within a 30 V system. The 4.2 mOhm on-resistance supports high-current handling up to 50 A. Verify that the 31 nC gate charge fits the driving capability of the control circuitry. Ensure the thermal management solution accommodates the 68 W power dissipation rating.
This part belongs to the OptiMOS 3 family of silicon-based N-channel MOSFETs. It is designed for general-purpose power switching and synchronous rectification. The TO-252-3 package provides a balance between current capacity and board space efficiency.
Check for updated OptiMOS generations or alternative pin-compatible parts if new designs are required due to the NRND status.
The absolute maximum gate-source voltage is ±20 V.
Yes, it is listed under automotive-grade MOSFET options, though specific AEC-Q101 certification details should be verified against the latest datasheet.
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