Single FETs, MOSFETs IPD050N03LGATMA1 product image

IPD050N03LGATMA1

$1.21
  • Description:MOSFET N-CH 30V 50A TO252-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:99afe3c1ca34 Category: Brand:

  
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IPD050N03LGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 50A TO252-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPD050N03LGATMA1

  • Description:MOSFET N-CH 30V 50A TO252-3
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 155°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO252-3-11
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IPD050N03LGATMA1

IPD050N03LGATMA1

Single FETs, MOSFETs Overview

The IPD050N03LGATMA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a DPAK-3 (TO-252-3) surface-mount package and operates with a drain-source voltage of 30 V and a continuous drain current of 50 A. The device exhibits a maximum on-resistance of 4.2 mOhms at 10 V gate drive. Key electrical parameters include a gate charge of 31 nC, threshold voltage of 1 V, and power dissipation of 68 W. It supports an operating temperature range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

  • OptiMOS 3 technology integration for optimized performance
  • Enhancement mode N-channel configuration
  • High thermal stability up to 175 °C junction temperature

Single FETs, MOSFETs Applications

  • Synchronous rectification in DC/DC converters
  • Power switching applications requiring low on-resistance
  • Automotive electronics systems

Single FETs, MOSFETs Procurement Notes

Verify the component status as NRND (Not Recommended for New Designs) before initiating procurement. Confirm that existing inventory or last-time buys align with long-term production plans. Ensure compatibility with DPAK-3 footprints during design validation. Cross-reference datasheet revisions to confirm parameter consistency.

Single FETs, MOSFETs Selection Notes

Select this component for designs prioritizing low conduction losses within a 30 V system. The 4.2 mOhm on-resistance supports high-current handling up to 50 A. Verify that the 31 nC gate charge fits the driving capability of the control circuitry. Ensure the thermal management solution accommodates the 68 W power dissipation rating.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 family of silicon-based N-channel MOSFETs. It is designed for general-purpose power switching and synchronous rectification. The TO-252-3 package provides a balance between current capacity and board space efficiency.

Single FETs, MOSFETs Replacement Considerations

Check for updated OptiMOS generations or alternative pin-compatible parts if new designs are required due to the NRND status.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±20 V.

Is this component suitable for automotive applications?

Yes, it is listed under automotive-grade MOSFET options, though specific AEC-Q101 certification details should be verified against the latest datasheet.

IPD050N03LGATMA1IPD050N03LGATMA1
$1.21
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