IPD053N08N3GBTMA1

Single FETs, MOSFETs Overview

The IPD053N08N3GBTMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS®3 series, housed in a PG-TO252-3 (DPAK) surface-mount package. It features a maximum drain-source voltage of 80 V and a continuous drain current of 90 A at 25 °C case temperature. The device exhibits a typical on-resistance of 4.4 mΩ at VGS=10 V and ID=90 A, with a total gate charge of 52 nC. It supports a junction temperature range of -55 °C to 175 °C and includes an integrated body diode.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching and synchronous rectification applications
• Low on-resistance combined with excellent gate charge characteristics
• Qualified according to JEDEC standards for target automotive applications
• Halogen-free construction compliant with IEC61249-2-21

Single FETs, MOSFETs Applications

• High-frequency power switching circuits
• Synchronous rectification stages
• Automotive electronic control units

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'GBTMA1' against official Infineon documentation to confirm tape-and-reel packaging details. Ensure the component matches the standard IPD053N08N3 G electrical specifications. Confirm RoHS compliance and halogen-free status as stated in the datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and fast switching speeds within an 80 V system. The TO-252 package facilitates efficient thermal management via direct PCB mounting. Consider the 5.3 mΩ maximum RDS(on) for efficiency calculations under full load conditions at elevated temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS®3 family of power transistors designed by Infineon Technologies. The series focuses on minimizing the figure of merit through reduced gate charge and on-resistance. The PG-TO252-3 package provides a robust mechanical solution for surface-mount assembly while maintaining reliable thermal performance.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other OptiMOS®3 devices with similar 80 V ratings and TO-252 packages, such as the IPB053N08N3 G. Verify pinout compatibility and thermal resistance values when replacing components in existing layouts.