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IPD30N08S2L21ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 30A TO252-3. Review the specifications below when checking this part for your BOM.
The IPD30N08S2L-21 is an N-channel enhancement mode MOSFET from the OptiMOS series, housed in a PG-TO252-3 (DPAK) surface-mount package. It features a maximum drain-source voltage of 75 V and a continuous drain current of 30 A at 25°C. The device has a maximum on-state resistance of 20.5 mΩ at Vgs=10V and 26 mΩ at Vgs=4.5V. Key electrical parameters include a gate charge of 56 nC (typical), a breakdown voltage of 75 V, and a thermal resistance junction-to-case of 1.1 K/W. It supports an operating temperature range from -55°C to +175°C.
Verify the specific ordering suffix matches the required tape-and-reel packaging configuration. Confirm that the component meets the necessary automotive quality standards for the intended application environment. Ensure compatibility with the target PCB footprint and soldering profile requirements during assembly.
Select this component for applications requiring a 75 V rating with high current handling capabilities. Consider the logic-level gate drive requirement when designing the control circuitry. Evaluate the thermal management strategy based on the specified thermal resistance values to ensure operation within the safe operating area.
This part belongs to Infineon's OptiMOS Power-Transistor family, designed for automotive and industrial applications. It utilizes advanced trench technology to achieve low on-resistance and fast switching speeds. The PG-TO252-3 package provides a balance of power handling and compact size for surface-mount implementations.
Check for direct pin-compatible alternatives within the same OptiMOS series or other manufacturers offering similar 75 V, 30 A specifications in a DPAK package. Verify that any substitute meets the same AEC-Q101 qualification and thermal characteristics.
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