IPDD60R050G7XTMA1

$7.30

Description：MOSFET N-CH 600V 47A HDSOP-10
Series：CoolMOS™ G7
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dae8c16b1375 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPDD60R050G7XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 47A HDSOP-10. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPDD60R050G7XTMA1

Description：MOSFET N-CH 600V 47A HDSOP-10
Series：CoolMOS™ G7
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：50mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id：4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs：68 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2670 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：278W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-HDSOP-10-1
Package / Case：10-PowerSOP Module

Single FETs, MOSFETs datasheet and documents for IPDD60R050G7XTMA1

IPDD60R050G7XTMA1

Single FETs, MOSFETs Overview

The IPDD60R050G7 is a 600V CoolMOS G7 single N-channel power MOSFET in PG-HDSOP-10 package. It features V(BR)DSS of 600V, RDS(on) max 50mΩ at Tj=25°C, and continuous drain current ID of 47A (TC=25°C). Gate charge Qg is typically 68nC. The device supports pulsed drain current up to 135A and operates within -55°C to +150°C junction temperature range.

Single FETs, MOSFETs Feature Summary

Integrates C7 Gold technology for optimized figure-of-merit performance.
Features an internal 4th pin Kelvin Source configuration with low parasitic source inductance.
Utilizes DDPAK SMD package with lead-free die attach process for improved thermal resistance.

Single FETs, MOSFETs Applications

Power Factor Correction (PFC) stages
PWM stages including TTF and LLC topologies
High power or high performance SMPS for computing, server, telecom, UPS, and solar

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the component meets JEDEC qualification standards for industrial applications prior to integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for hard and soft switching applications requiring high efficiency. The integrated Kelvin Source minimizes ringing and improves switching speed. Ensure PCB layout accommodates the PG-HDSOP-10 footprint and provides adequate copper area for optimal thermal dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon CoolMOS G7 SJ series, designed to combine advanced silicon technology with robust surface-mount packaging. It targets high-current topologies where compact footprint and superior thermal management are critical requirements.