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IPDQ65R080CFD7AXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUTOMOTIVE_COOLMOS. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPDQ65R080CFD7AXTMA1
- Description：AUTOMOTIVE_COOLMOS
- Series：CoolMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 630µA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2513 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：223W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-HDSOP-22-1
- Package / Case：22-PowerBSOP Module
Single FETs, MOSFETs datasheet and documents for IPDQ65R080CFD7AXTMA1
Single FETs, MOSFETs Overview
The IPDQ65R080CFD7AXTMA1 is a 650V CoolMOS™ CFD7A single N-channel power MOSFET in a PG-HDSOP-22 package. It features an integrated fast body diode and automotive qualification per AEC-Q101. Key electrical parameters include a drain-source breakdown voltage of 650V, a maximum on-state resistance of 80mΩ at 10V gate drive, and a continuous drain current of 36A. The device exhibits a total gate charge of 50nC and supports a pulsed drain current of 107A.
Single FETs, MOSFETs Feature Summary
- Automotive qualified according to AEC-Q101 standards for high reliability
- Integrated fast body diode with low reverse recovery charge
- Kelvin source pin for advanced controllability and reduced switching noise
- Top-side cooled package design for efficient thermal management
Single FETs, MOSFETs Applications
- Power Factor Correction (PFC) stages
- Resonant switching topologies such as LLC converters
- ZVS phase-shift full-bridge DC-DC converters
- On-board battery chargers
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix XTMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the component matches the PG-HDSOP-22 footprint requirements. Confirm that the application environment meets the specified operating temperature range and voltage ratings before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring automotive-grade reliability and high-voltage performance. The Kelvin source connection improves switching accuracy compared to standard two-terminal packages. Consider the thermal resistance characteristics when designing heat dissipation solutions for high-power density applications.
Single FETs, MOSFETs Part Context
This part belongs to the CoolMOS™ CFD7A series, representing Infineon's latest generation of market-leading automotive-qualified high-voltage silicon junction MOSFETs. The series focuses on minimizing figure-of-merit values through ultra-low gate charge and optimized on-state resistance.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference lists for verified substitutes. Verify compatibility regarding package dimensions, pinout configuration, and thermal characteristics before substituting.
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