IPG15N06S3L-45

FET, MOSFET Arrays Overview

The IPG15N06S3L-45 is an OptiMOS-T dual N-channel logic level enhancement mode power transistor in a PG-TDSON-8-4 package. It features a drain-source voltage of 55 V and a continuous drain current of 15 A per channel at 25 °C. The maximum on-state resistance is 45 mΩ at VGS=10 V and 80 mΩ at VGS=5 V. Total gate charge is 20 nC, with a threshold voltage range of 1.2 V to 2.2 V. Power dissipation is 21 W at 25 °C, operating temperature ranges from -55 °C to +175 °C, and it is AEC-Q101 qualified.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration providing two independent channels within a single compact surface-mount package.
• Logic-level operation capability allowing direct drive from standard logic interfaces.
• AEC-Q101 qualification ensuring reliability for automotive electronic applications.
• High thermal robustness supporting operation up to 175 °C junction temperature.

FET, MOSFET Arrays Applications

• Automotive power management systems
• Motor control circuits
• DC-DC converter topologies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual isolated channels in a small footprint. Ensure the driving circuit can supply sufficient gate voltage to achieve the lower 45 mΩ resistance threshold. Verify that the PCB copper area meets the thermal requirements for the specified power dissipation limits.

FET, MOSFET Arrays Part Context

This device belongs to the OptiMOS-T family of power transistors manufactured by Infineon Technologies. It utilizes silicon technology optimized for low on-resistance and fast switching speeds. The component is designed for high-volume manufacturing and general-purpose power switching applications.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Cross-reference pinouts and electrical parameters carefully when considering alternative manufacturers' components.

FET, MOSFET Arrays FAQ

What is the maximum avalanche energy rating?

The single pulse avalanche energy (EAS) is rated at 47 mJ when the avalanche current is 7.5 A.

Is the device suitable for automotive environments?

Yes, the IPG15N06S3L-45 is qualified according to the AEC-Q101 standard.

What is the typical reverse recovery charge?

The typical reverse recovery charge (Qrr) is 9 nC under test conditions of VR=27.5 V and diF/dt=100 A/µs.