IPG20N04S409ATMA1

FET, MOSFET Arrays Overview

The IPG20N04S409ATMA1 is a dual N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS-T2 technology. It features a 40 V drain-source voltage rating and a continuous drain current of 20 A at 25°C. The device offers a maximum on-resistance of 8.6 mΩ at 10 V gate drive. Packaged in a PG-TDSON-8 (SSO8) format with wettable flanks, it supports surface-mount assembly. The component is qualified to AEC-Q101 standards for automotive applications and operates within a junction temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a single compact package for space-efficient circuit design.
• OptiMOS-T2 silicon technology providing low conduction losses and robust thermal performance.
• Wettable flank package design enabling automated optical inspection for enhanced solder joint quality assurance.

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix '09' against official Infineon documentation to confirm the exact Rds(on) specification of 8.6 mΩ. Confirm that the PG-TDSON-8 package variant matches the required PCB footprint and thermal dissipation needs. Ensure the AEC-Q101 qualification aligns with target automotive reliability standards before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a limited board area. The 40V rating suits low-voltage automotive systems. Consider the 8.6 mΩ on-resistance for efficiency requirements. Verify compatibility with standard gate drive voltages of 10V or higher to achieve specified performance levels.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for high-efficiency switching in automotive environments. It replaces older discrete dual solutions by integrating two channels into one optimized semiconductor structure. The technology focuses on minimizing figure-of-merit metrics for improved system power density.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon cross-reference tools for verified alternatives.