FET, MOSFET Arrays IPG20N04S412ATMA1 product image

IPG20N04S412ATMA1

  • Description:MOSFET 2N-CH 40V 20A 8TDSON
  • Series:OptiMOS™

SKU:60383cf29ec3 Category: Brand:

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IPG20N04S412ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N04S412ATMA1

  • Description:MOSFET 2N-CH 40V 20A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):40V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:12.2mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:4V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:1470pF @ 25V
  • Power - Max:41W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TDSON-8-4
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N04S412ATMA1

IPG20N04S412ATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4-12 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 series, housed in a PG-TDSON-8 package. It features a drain-source voltage of 40 V and a continuous drain current of 20 A per channel at 25 °C. The maximum on-state resistance is 12.2 mΩ at VGS=10 V. Key dynamic parameters include a total gate charge of 18 nC and a power dissipation rating of 41 W. The device supports an operating temperature range from -55 °C to +175 °C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration with normal level enhancement mode operation
  • AEC-Q101 automotive qualification for reliability
  • High thermal stability supporting up to 175 °C junction temperature
  • 100% avalanche tested for robustness

FET, MOSFET Arrays Applications

  • Automotive power management systems
  • Low-side switching applications
  • DC-DC converter circuits
  • Motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging details. Confirm RoHS compliance status and check for any recent lifecycle changes or obsolescence notices before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual isolated channels within a compact surface-mount footprint. Ensure the application voltage remains below the 40 V breakdown limit and that thermal management strategies accommodate the specified power dissipation ratings under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for low-voltage high-current applications. It utilizes silicon technology to provide efficient switching performance. The PG-TDSON-8 package facilitates effective heat dissipation through the exposed pad, suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

Consult official replacement guides for verified substitutes. Generic cross-references may not match the specific RDS(on) tolerance or AEC-Q101 qualification required for automotive integration.

IPG20N04S412ATMA1IPG20N04S412ATMA1

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