SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
IPG20N04S412ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N04S4-12 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 series, housed in a PG-TDSON-8 package. It features a drain-source voltage of 40 V and a continuous drain current of 20 A per channel at 25 °C. The maximum on-state resistance is 12.2 mΩ at VGS=10 V. Key dynamic parameters include a total gate charge of 18 nC and a power dissipation rating of 41 W. The device supports an operating temperature range from -55 °C to +175 °C and is qualified under AEC-Q101 standards.
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging details. Confirm RoHS compliance status and check for any recent lifecycle changes or obsolescence notices before finalizing procurement plans.
Select this component for designs requiring dual isolated channels within a compact surface-mount footprint. Ensure the application voltage remains below the 40 V breakdown limit and that thermal management strategies accommodate the specified power dissipation ratings under expected load conditions.
This part belongs to the OptiMOS-T2 family, designed for low-voltage high-current applications. It utilizes silicon technology to provide efficient switching performance. The PG-TDSON-8 package facilitates effective heat dissipation through the exposed pad, suitable for dense PCB layouts.
Consult official replacement guides for verified substitutes. Generic cross-references may not match the specific RDS(on) tolerance or AEC-Q101 qualification required for automotive integration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.