ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IPG20N04S418AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IPG20N04S418AATMA1
- Description：MOSFET 2N-CH 40V 20A 8TDSON
- Series：OptiMOS™ T2
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：20A (Tc)
- Rds On (Max) @ Id, Vgs：18.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：4V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：789pF @ 25V
- Power - Max：26W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount, Wettable Flank
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-TDSON-8-10
- Grade：Automotive
- Qualification：AEC-Q101
FET, MOSFET Arrays datasheet and documents for IPG20N04S418AATMA1
FET, MOSFET Arrays Overview
The IPG20N04S4-18A is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 40 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 18.4 mΩ at VGS=10 V and a typical gate charge of 8.7 nC. It supports an operating temperature range from -55 °C to +175 °C and is qualified under AEC-Q101 standards.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration with normal level enhancement mode operation
- Optimized low on-state resistance for high efficiency power switching
- Robust avalanche capability verified through 100% testing
- Compatible with automatic optical inspection (AOI) processes
FET, MOSFET Arrays Applications
- Automotive power management systems
- DC-DC converter circuits
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct package marking and electrical tolerances. Confirm that the component meets the required automotive qualification standards for your specific application environment before finalizing procurement decisions.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel MOSFET with low RDS(on) and high thermal stability is required. Ensure the design accommodates the 40 V breakdown voltage and 20 A current rating while considering the thermal resistance characteristics for the intended PCB footprint and cooling conditions.
FET, MOSFET Arrays Part Context
This part belongs to the OptiMOS-T2 series, designed for automotive-grade reliability. It utilizes silicon technology to provide enhanced performance in power switching applications. The PG-TDSON-8 package offers a compact form factor suitable for space-constrained electronic designs requiring robust thermal dissipation capabilities.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
