IPG20N04S4L07ATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4L-07ATMA1 is a dual N-channel enhancement mode MOSFET from Infineon's OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 40 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 7.2 mΩ at VGS=10 V and 9.2 mΩ at VGS=4.5 V. Key electrical parameters include a gate charge of 39 nC (typical) and 50 nC (maximum), a threshold voltage range of 1.2 V to 2.2 V, and a junction-to-case thermal resistance of 2.3 K/W. It supports an operating temperature range from -55 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel logic level configuration with enhanced switching performance
• Qualified for automotive applications under AEC-Q101 standards
• Robust avalanche energy handling capability verified through testing
• Compatible with high-temperature reflow soldering processes up to 260°C

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Low-side switching circuits in vehicle electronics
• DC-DC converter stages requiring high efficiency
• Motor control interfaces for automotive actuators

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure that the component meets the required AEC-Q101 qualification status for your target automotive application. Cross-reference the datasheet revision date to confirm the validity of the thermal and electrical parameters provided.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring dual independent channels within a compact surface-mount footprint. The low on-resistance makes it suitable for high-current applications where conduction losses must be minimized. Consider the 40 V rating and 20 A current capacity relative to your system's peak load requirements and thermal management capabilities.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series, designed for automotive-grade reliability. It utilizes silicon technology optimized for low RDS(on) and fast switching speeds. The PG-TDSON-8 package provides efficient thermal dissipation while maintaining a small board area, making it ideal for space-constrained automotive electronic control units.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing existing designs.