ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
IPG20N04S4L11ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 40V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IPG20N04S4L11ATMA1
- Description：MOSFET 2N-CH 40V 20A 8TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：20A
- Rds On (Max) @ Id, Vgs：11.6mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1990pF @ 25V
- Power - Max：41W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerVDFN
- Supplier Device Package：PG-TDSON-8-4
- Grade：Automotive
- Qualification：AEC-Q101
FET, MOSFET Arrays datasheet and documents for IPG20N04S4L11ATMA1
FET, MOSFET Arrays Overview
The IPG20N04S4L-11 is a dual N-channel logic level enhancement mode MOSFET from the OptiMOS-T2 family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and a continuous drain current of 20 A per channel. The device has a maximum on-state resistance of 11.6 mΩ at VGS=10 V and 15.5 mΩ at VGS=4.5 V. It supports an operating temperature range from -55 °C to +175 °C, is AEC-Q101 qualified, and includes 100% avalanche testing.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration with logic-level enhancement mode operation
- AEC-Q101 automotive qualification for high reliability applications
- Robust thermal performance supporting up to 175°C junction temperature
- 100% avalanche tested for enhanced ruggedness
FET, MOSFET Arrays Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact electrical tolerances and packaging details. Confirm component availability status as product lifecycle stages may affect long-term supply continuity. Ensure design-in compliance with specified maximum ratings during procurement planning.
FET, MOSFET Arrays Selection Notes
Select this component for designs requiring dual-channel isolation within a compact surface-mount footprint. Evaluate the low gate charge characteristics for switching efficiency requirements. Consider the wide operating temperature range for harsh environment deployments where standard commercial grade devices are insufficient.
FET, MOSFET Arrays Part Context
This part belongs to the OptiMOS-T2 series, representing Infineon's second-generation trench technology for power MOSFETs. The series focuses on minimizing on-resistance while maintaining robust gate oxide reliability. The PG-TDSON-8 package provides efficient thermal dissipation through exposed pad connectivity.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference lists for verified substitutes. Verify pinout compatibility and thermal resistance values when replacing existing components in established designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
