IPG20N04S4L18AATMA1

FET, MOSFET Arrays Overview

The IPG20N04S4L-18A is a dual N-channel logic level enhancement mode MOSFET from the OptiMOS-T2 family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 40 V and a continuous drain current of 20 A at Tc=25°C. The device exhibits a maximum on-state resistance of 18 mΩ at VGS=10V and 26 mΩ at VGS=4.5V. It supports an operating temperature range of -55°C to +175°C, has a gate threshold voltage of 1.2V to 2.2V, and total gate charge of up to 15 nC.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration for efficient half-bridge or synchronous rectification applications
• Logic-level gate drive capability allowing direct interface with standard control signals
• Automotive-grade reliability certified under AEC-Q101 standards
• Robust thermal performance supporting high junction temperatures up to 175°C

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel packaging format. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure the PG-TDSON-8 footprint aligns with your PCB design guidelines. Check for any recent revision history updates in the datasheet before finalizing procurement specifications.

FET, MOSFET Arrays Selection Notes

Select this component when low on-resistance and logic-level compatibility are critical for automotive applications. Consider the 40V rating and 20A current capacity against your circuit's peak load requirements. Evaluate the thermal resistance characteristics relative to your cooling strategy. Verify that the gate charge parameters fit within your driver's output capabilities.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS-T2 series, designed for automotive environments requiring high reliability. It utilizes advanced trench technology to minimize conduction losses while maintaining robust avalanche characteristics. The dual-channel layout optimizes board space compared to single-channel alternatives.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes include IPG20N04S4-18A and IPG20N04S4L-11A. Verify pinout compatibility and ensure electrical parameters such as RDS(on) and VGS(th) meet your design margins before substitution.

FET, MOSFET Arrays FAQ

Is the IPG20N04S4L-18A qualified for automotive applications?

Yes, the device is explicitly qualified according to the AEC-Q101 standard.

What is the maximum operating junction temperature?

The maximum operating and storage temperature range extends up to +175°C.

Does the device support avalanche energy handling?

Yes, it is 100% avalanche tested and can handle a single pulse avalanche energy of 25 mJ at ID=10A.