IPG20N06S2L35ATMA1

FET, MOSFET Arrays Overview

The IPG20N06S2L35ATMA1 is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS family. It features a PG-TDSON-8 package with a maximum drain-source voltage of 55 V and a continuous drain current of 20 A per channel at 25°C. The device exhibits a maximum on-state resistance of 35 mΩ at VGS=10V and ID=15A, supporting an operating temperature range from -55°C to +175°C. It is qualified under AEC-Q101 standards for automotive applications.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Logic level gate drive capability for direct microcontroller interfacing
• Automotive-grade reliability with AEC-Q101 qualification
• High thermal performance allowing operation up to 175°C junction temperature

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• Low-side switching in engine control units
• Body electronics load management
• General purpose high-current switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 grade for your target application environment. Cross-reference the datasheet revision date to ensure access to the most recent electrical characteristics and thermal data before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required within a small footprint. The low gate threshold voltage facilitates efficient driving from standard logic levels. Ensure the PCB layout supports the specified thermal dissipation requirements given the 35 mΩ on-resistance. Verify that the 55 V breakdown voltage provides sufficient margin for the intended circuit supply voltages.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS Power-Transistor series, designed for robust performance in demanding environments. The PG-TDSON-8 package offers improved thermal conductivity compared to traditional plastic packages. The '35' designation indicates the maximum on-state resistance class, balancing conduction losses with switching performance for cost-effective power management solutions.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the PG-TDSON-8 package, 55 V rating, and dual N-channel configuration. Verify that substitute components meet or exceed the 35 mΩ RDS(on) specification and maintain AEC-Q101 qualification if used in automotive contexts. Check pinout compatibility to ensure seamless integration without PCB redesign.