IPG20N06S2L65AAUMA1

FET, MOSFET Arrays Overview

The IPG20N06S2L-65A is a dual N-channel power MOSFET from Infineon's OptiMOS family, housed in a PG-TDSON-8 (Dual SSO8) package. It features a drain-source voltage of 55 V and a continuous drain current of 20 A at 25°C. The device has a maximum on-resistance of 65 mΩ at 10 V gate drive. Key electrical parameters include a typical gate charge of 9.4 nC to 12 nC at 10 V, a threshold voltage range of 1.2 V to 2 V, and a junction-to-case thermal resistance of 3.5 K/W. It operates within a temperature range of -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Automotive-grade reliability certified for harsh environments
• OptiMOS technology ensures low conduction losses and high efficiency
• Robust thermal performance with optimized heat dissipation
• High gate robustness against transient voltage spikes

FET, MOSFET Arrays Applications

• Electric power steering systems
• Two-wheeler and three-wheeler traction inverters
• General automotive power switching applications

FET, MOSFET Arrays Procurement Notes

Verify the complete part number suffix, specifically 'AUMA1', against official Infineon documentation to confirm the specific tape-and-reel packaging configuration and manufacturing lot details. Ensure the component meets the required automotive quality standards for your specific application environment before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel configuration is required for space-constrained automotive designs. The 65 mΩ on-resistance offers a balance between conduction loss and cost. Consider the PG-TDSON-8 package dimensions and thermal characteristics relative to your PCB layout constraints and cooling requirements.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS automotive MOSFET portfolio, designed for high-reliability applications. It utilizes advanced trench technology to achieve low RDS(on) while maintaining robust gate oxide integrity. The Dual SSO8 package allows for efficient use of board space in compact electronic control units.

FET, MOSFET Arrays Replacement Considerations

Direct replacements must match the 55V/20A rating, 65 mΩ max RDS(on), and PG-TDSON-8 package. Verify that any substitute also holds automotive certification and compatible thermal resistance values to ensure system reliability.