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IPG20N06S2L65AUMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for IPG20N06S2L65AUMA1
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for IPG20N06S2L65AUMA1
FET, MOSFET Arrays Overview
The IPG20N06S2L65AUMA1 is a dual N-channel logic level enhancement mode MOSFET from Infineon's OptiMOS family. It features a 55V drain-source voltage rating and a continuous drain current of 20A at 25°C. The device offers a maximum on-resistance of 65mΩ at VGS=10V, with a typical gate charge of 12nC at 10V. Packaged in an 8-PowerVDFN (PG-TDSON-8-10) surface-mount format, it supports junction temperatures up to 175°C and is designed for automotive applications.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration within a compact PowerVDFN package
- Logic level gate drive capability for efficient control
- Automotive-grade reliability with AEC-Q101 qualification
- High thermal performance supporting operation up to 175°C
FET, MOSFET Arrays Applications
- Automotive power distribution systems
- Motor control circuits
- General purpose switching applications requiring low RDS(on)
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm exact electrical tolerances and packaging details. Ensure compatibility with PG-TDSON-8-10 footprint requirements during PCB layout. Confirm RoHS compliance status and lead times through authorized distributors prior to procurement.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel solution is required in a small form factor. The 65mΩ on-resistance balances conduction losses with cost efficiency. Verify that the 55V voltage rating meets system peak transient requirements. Consider the 175°C junction temperature limit for high-temperature environments.
FET, MOSFET Arrays Part Context
This part belongs to Infineon's OptiMOS power transistor series, optimized for automotive and industrial markets. The IPG prefix typically denotes a specific generation or feature set within the broader MOSFET portfolio. It utilizes silicon technology and is designed to meet stringent automotive quality standards.
FET, MOSFET Arrays Replacement Considerations
Check for direct substitutes such as IPG20N06S2L-35A or IPG20N06S2L-50 if lower on-resistance is needed. Verify pinout compatibility with the PG-TDSON-8-10 package before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
