IPG20N06S415ATMA2

FET, MOSFET Arrays Overview

The IPG20N06S4-15 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 15.5 mΩ at VGS=10 V and supports an 80 A pulsed current. Total power dissipation reaches 50 W with one channel active. Thermal resistance from junction to case is 3 K/W. Operating temperature spans -55 °C to +175 °C.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with normal level enhancement mode operation
• Qualified for automotive applications under AEC-Q101 standards
• High thermal stability supporting up to 175 °C junction temperature
• Validated for avalanche energy handling through 100% testing

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure component authenticity by sourcing from authorized distributors. Confirm RoHS compliance status and check for any recent lifecycle updates or obsolescence notices before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low conduction losses within a 60 V system. The dual-channel architecture allows for efficient half-bridge configurations. Consider the 15.5 mΩ RDS(on) for thermal management calculations. Verify that the PG-TDSON-8 footprint aligns with the PCB layout constraints and that gate drive voltages meet the 10 V requirement for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series, designed for high-efficiency switching. It utilizes silicon technology optimized for automotive environments. The dual SS08 (PG-TDSON-8) package provides compact surface-mount integration. The product line emphasizes reliability and low gate charge characteristics suitable for modern power electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference guides for verified substitutes. Ensure replacement parts match the 60 V rating, 20 A current capacity, and PG-TDSON-8 package dimensions. Verify equivalent RDS(on) and thermal resistance values to maintain circuit performance.