IPG20N06S4L11AATMA1

$2.02

Description：MOSFET 2N-CH 60V 20A 8TDSON
Series：OptiMOS™

SKU:14c77cffe81c Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IPG20N06S4L11AATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N06S4L11AATMA1

Description：MOSFET 2N-CH 60V 20A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：20A
Rds On (Max) @ Id, Vgs：11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs：53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：4020pF @ 25V
Power - Max：65W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerVDFN
Supplier Device Package：PG-TDSON-8-10
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N06S4L11AATMA1

IPG20N06S4L11AATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4L-11A is a dual N-channel logic level enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25 °C. The maximum on-state resistance is 11.2 mΩ at VGS=10 V. Total gate charge is 53 nC max. It supports an operating temperature range of -55 °C to +175 °C and is qualified to AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with logic-level enhancement mode operation
Automotive-grade qualification compliant with AEC-Q101 standards
High thermal performance supporting junction temperatures up to 175 °C
100% avalanche tested for robustness under transient conditions

FET, MOSFET Arrays Applications

Automotive power distribution systems
DC-DC converter circuits
Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and marking configurations. Confirm that the component meets the required automotive quality standards for your specific application environment before finalizing procurement plans.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high current handling in a compact surface-mount footprint. Ensure the PCB layout accommodates the thermal requirements associated with the PG-TDSON-8 package and the specified power dissipation limits under your operational duty cycles.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series by Infineon Technologies, designed for low on-resistance and efficient switching. It utilizes silicon technology and is intended for use in demanding environments where reliability and thermal stability are critical factors in system design.