IPG20N06S4L11ATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4L-11 is a dual N-channel logic level enhancement mode MOSFET from the OptiMOS-T2 series. It features a PG-TDSON-8 package with a maximum drain-source voltage of 60 V and continuous drain current of 20 A per channel at 25 °C. The device has a maximum on-state resistance of 11.2 mΩ at VGS=10 V and 15.8 mΩ at VGS=4.5 V. It supports an operating temperature range of -55 °C to +175 °C, includes 100% avalanche testing, and meets MSL1 standards for up to 260 °C peak reflow.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact surface-mount package
• Qualified for automotive applications under AEC-Q101 standards
• Capable of handling high thermal stress with 175 °C junction temperature rating
• Logic-level gate drive compatibility for efficient switching

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component matches the required RoHS compliance and lead-free status for your assembly process. Check for any recent revision history updates that may affect marking or electrical parameters before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required within a limited board area. Ensure the design accounts for the 2.3 K/W thermal resistance junction-to-case rating. Verify that the gate drive voltage aligns with the specified threshold characteristics for optimal RDS(on) performance. Consider the pulsed drain current capabilities if transient loads are present in the application circuit.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for robust performance in automotive environments. It utilizes silicon technology to provide low conduction losses and fast switching speeds. The PG-TDSON-8 package offers improved thermal dissipation compared to traditional SMD packages while maintaining a small footprint suitable for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

IPG20N06S4L-11A

FET, MOSFET Arrays FAQ

Is the IPG20N06S4L-11 qualified for automotive use?

Yes, the device is AEC-Q101 qualified, making it suitable for automotive applications.

What is the maximum operating junction temperature?

The maximum operating and storage temperature range extends up to +175 °C.

Does the component undergo avalanche testing?

Yes, the datasheet specifies that the device is 100% avalanche tested.