IPG20N06S4L11ATMA2

$1.99

Description：MOSFET 2N-CH 60V 20A 8TDSON
Series：OptiMOS™

SKU:7c20eb009388 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

IPG20N06S4L11ATMA2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N06S4L11ATMA2

Description：MOSFET 2N-CH 60V 20A 8TDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：20A (Tc)
Rds On (Max) @ Id, Vgs：11.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id：2.2V @ 28µA
Gate Charge (Qg) (Max) @ Vgs：53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：4020pF @ 25V
Power - Max：65W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount, Wettable Flank
Package / Case：8-PowerVDFN
Supplier Device Package：PG-TDSON-8-10
Grade：Automotive
Qualification：AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N06S4L11ATMA2

IPG20N06S4L11ATMA2

FET, MOSFET Arrays Overview

The IPG20N06S4L-11 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25 °C. The maximum on-state resistance is 11.2 mΩ at VGS=10 V. Total gate charge is 53 nC max. It supports an operating temperature range of -55 °C to +175 °C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

Dual N-channel logic level configuration with enhancement mode operation
AEC-Q101 automotive qualification for reliability
High thermal performance with junction-to-case resistance of 2.3 K/W
100% avalanche tested for robustness

FET, MOSFET Arrays Applications

Automotive power distribution systems
Low-side switching applications
DC-DC converter circuits
Motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 automotive grade standards for your specific application environment. Cross-reference the datasheet revision date to ensure compatibility with your design requirements.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low on-resistance and high current handling in a compact surface-mount footprint. Consider the 175 °C maximum junction temperature capability for high-temperature environments. Evaluate the total gate charge and threshold voltage characteristics to ensure compatibility with your driver circuitry and logic levels.

FET, MOSFET Arrays Part Context

This device belongs to Infineon's OptiMOS-T2 series, designed for automotive and industrial applications. It utilizes silicon technology to provide efficient power switching. The PG-TDSON-8 package offers improved thermal dissipation compared to traditional packages, making it suitable for space-constrained PCB layouts.