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IPG20N06S4L14ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 20A 8TDSON. Review the specifications below when checking this part for your BOM.
The IPG20N06S4L-14 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25°C. The device exhibits a maximum on-state resistance of 13.7 mΩ at VGS=10V and a gate charge of 39 nC max. It supports an operating temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package marking and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 grade and RoHS compliance status for your target assembly process. Cross-reference the datasheet revision date to ensure alignment with current design guidelines.
Select this component for designs requiring low conduction losses in 60 V environments. The dual-channel architecture allows for efficient half-bridge or synchronous rectifier configurations. Ensure the PCB footprint matches the PG-TDSON-8 dimensions and consider the thermal resistance characteristics when designing heat dissipation paths for high-current applications.
This part belongs to Infineon's OptiMOS-T2 series, designed for automotive and industrial applications. It utilizes silicon technology to provide enhanced switching performance and lower gate charge compared to previous generations. The dual SSO8 (PG-TDSON-8) package facilitates compact board layouts while maintaining high power density capabilities.
Check for direct pin-compatible alternatives within the same OptiMOS-T2 family, such as variants with different RDS(on) ratings like the IPG20N06S4L-11 or IPG20N06S4L-26, ensuring electrical parameters meet system requirements.
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