FET, MOSFET Arrays IPG20N06S4L14ATMA1 product image

IPG20N06S4L14ATMA1

  • Description:MOSFET 2N-CH 60V 20A 8TDSON
  • Series:OptiMOS™

SKU:3289ca6f9ef2 Category: Brand:

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IPG20N06S4L14ATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 20A 8TDSON. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for IPG20N06S4L14ATMA1

  • Description:MOSFET 2N-CH 60V 20A 8TDSON
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:20A
  • Rds On (Max) @ Id, Vgs:13.7mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2890pF @ 25V
  • Power - Max:50W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TDSON-8-4
  • Grade:Automotive
  • Qualification:AEC-Q101

FET, MOSFET Arrays datasheet and documents for IPG20N06S4L14ATMA1

IPG20N06S4L14ATMA1

FET, MOSFET Arrays Overview

The IPG20N06S4L-14 is a dual N-channel enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25°C. The device exhibits a maximum on-state resistance of 13.7 mΩ at VGS=10V and a gate charge of 39 nC max. It supports an operating temperature range of -55°C to +175°C and is qualified to AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration with logic-level enhancement mode operation
  • AEC-Q101 automotive qualification for reliability
  • High thermal performance with junction-to-case resistance of 3 K/W
  • 100% avalanche tested for robustness

FET, MOSFET Arrays Applications

  • Automotive power management systems
  • DC-DC converter circuits
  • Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package marking and tape-and-reel specifications. Confirm that the component meets the required AEC-Q101 grade and RoHS compliance status for your target assembly process. Cross-reference the datasheet revision date to ensure alignment with current design guidelines.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low conduction losses in 60 V environments. The dual-channel architecture allows for efficient half-bridge or synchronous rectifier configurations. Ensure the PCB footprint matches the PG-TDSON-8 dimensions and consider the thermal resistance characteristics when designing heat dissipation paths for high-current applications.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS-T2 series, designed for automotive and industrial applications. It utilizes silicon technology to provide enhanced switching performance and lower gate charge compared to previous generations. The dual SSO8 (PG-TDSON-8) package facilitates compact board layouts while maintaining high power density capabilities.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same OptiMOS-T2 family, such as variants with different RDS(on) ratings like the IPG20N06S4L-11 or IPG20N06S4L-26, ensuring electrical parameters meet system requirements.

IPG20N06S4L14ATMA1IPG20N06S4L14ATMA1

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