IPG20N06S4L14ATMA2

FET, MOSFET Arrays Overview

The IPG20N06S4L-14 is a dual N-channel logic level enhancement mode MOSFET from the OptiMOS-T2 family, housed in a PG-TDSON-8 package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A per channel at 25 °C. The device exhibits a maximum on-state resistance of 13.7 mΩ at VGS=10 V and 20 mΩ at VGS=4.5 V. Key electrical parameters include a gate charge of 39 nA (max) and an avalanche energy rating of 90 mJ. It supports a junction temperature range of -55 °C to +175 °C and is qualified under AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with logic-level enhancement mode operation
• Automotive-grade qualification compliant with AEC-Q101 standards
• High thermal stability supporting up to 175 °C operating temperatures
• Robust avalanche performance verified through 100% testing

FET, MOSFET Arrays Applications

• Automotive power management systems
• Low-side switching applications
• DC-DC converter circuits
• Motor control interfaces

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required automotive quality standards for your specific application environment. Cross-reference the datasheet revision date to ensure access to the most recent thermal and electrical characteristics before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel solution is required for low-voltage automotive applications. The OptiMOS-T2 technology provides optimized gate charge characteristics suitable for efficient switching. Ensure the PCB footprint matches the PG-TDSON-8 package dimensions and verify that the thermal design accommodates the specified junction-to-case thermal resistance values under expected load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 series, designed specifically for automotive electronics requiring high reliability and efficiency. The dual-channel architecture allows for compact circuit designs in space-constrained modules. Manufactured using advanced silicon processes, it balances low conduction losses with robust switching capabilities typical of modern power transistor families.

FET, MOSFET Arrays Replacement Considerations

Check for updated product codes within the same series, as manufacturers may revise part numbers without changing functionality. Verify pin compatibility and thermal resistance values when substituting similar dual N-channel MOSFETs from other vendors to ensure equivalent performance in existing layouts.