IPG20N10S4L22ATMA1

FET, MOSFET Arrays Overview

The IPG20N10S4L-22 is a dual N-channel logic level enhancement mode power transistor from Infineon's OptiMOS-T2 series. It features a PG-TDSON-8-4 package with a maximum drain-source voltage of 100 V and a continuous drain current of 20 A per channel at 25°C. The device has a maximum on-state resistance of 22 mΩ at VGS=10V and 28 mΩ at VGS=4.5V. It supports an operating temperature range of -55°C to +175°C, offers 130 mJ single-pulse avalanche energy, and is qualified to AEC-Q101 standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration providing two independent channels in a compact surface-mount package
• Logic-level gate drive capability allowing efficient control with standard low-voltage signals
• AEC-Q101 qualification ensuring reliability for demanding automotive electronic environments
• High thermal robustness supporting operation up to 175°C junction temperature

FET, MOSFET Arrays Applications

• Automotive power distribution systems
• DC-DC converter circuits
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and marking variations. Confirm component status as active or obsolete before design finalization. Ensure compliance with RoHS directives and REACH regulations for intended markets. Validate that the PG-TDSON-8-4 footprint matches the target PCB layout requirements.

FET, MOSFET Arrays Selection Notes

Select this component when a dual-channel solution is required within a limited board area. Consider the 100 V rating and 20 A current capacity for appropriate load handling. Evaluate the 22 mΩ on-resistance for conduction loss optimization. Verify compatibility with the desired gate drive voltage levels for optimal switching performance.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS-T2 family, designed for high efficiency and robustness. It utilizes silicon technology to deliver low on-resistance and fast switching characteristics. The dual-channel architecture simplifies circuit design by integrating two transistors into a single package, reducing component count and assembly complexity.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same OptiMOS-T2 series. Verify that any substitute maintains the 100 V breakdown voltage and similar RDS(on) specifications. Ensure the replacement package matches the PG-TDSON-8-4 dimensions for mechanical fit.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for one active channel?

The maximum pulsed drain current is 80 A.

Is the device suitable for high-temperature automotive environments?

Yes, it is AEC-Q101 qualified and supports an operating temperature range up to 175°C.

What is the typical avalanche energy capability?

The single-pulse avalanche energy is rated at 130 mJ when the drain current is 10 A.