IPI06N03LA

Single FETs, MOSFETs Overview

The IPI06N03LA is an OptiMOS 2 N-channel power transistor manufactured by Infineon Technologies. It is housed in a P-TO262-3-1 (I2PAK) package and features logic-level gate drive compatibility. Key electrical parameters include a drain-source breakdown voltage of 25 V, a maximum continuous drain current of 50 A at 25 °C case temperature, and a maximum on-state resistance of 9.9 mΩ at VGS=4.5 V. The device supports a pulsed drain current of 350 A and offers an avalanche energy rating of 225 mJ. It operates within a junction temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

• Logic level compatible for direct drive from standard logic interfaces
• Optimized low on-resistance and gate charge product for high efficiency
• Rated for high dv/dt performance in the reverse diode
• Designed for robust operation in high-frequency switching applications

Single FETs, MOSFETs Applications

• High-frequency DC/DC converters
• Synchronous rectification circuits
• Low-voltage power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code Q67042-S4147 corresponds to the P-TO262-3-1 package variant when sourcing. Confirm compliance with RoHS directives and check for any lead-free material declarations required by your manufacturing standards. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low voltage drop and high current handling in a through-hole or surface-mount compatible TO-262 footprint. Consider the 25 V breakdown limit and 50 A continuous current rating against peak load requirements. Evaluate the logic-level threshold characteristics if driving directly from microcontrollers or low-voltage logic gates without additional driver stages.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS 2 family of power transistors, designed to balance conduction losses and switching speeds. It shares technical specifications with the IPB06N03LA and IPP06N03LA models, differing primarily in the physical package configuration. The IPI06N03LA specifically utilizes the P-TO262-3-1 housing.

Single FETs, MOSFETs Replacement Considerations

Direct functional equivalents include IPB06N03LA and IPP06N03LA. Verify pinout compatibility and thermal interface requirements before substitution. Cross-reference with other 25 V, 50 A N-channel MOSFETs only if package constraints allow.