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IPI22N03S4L15AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 22A TO262-3. Review the specifications below when checking this part for your BOM.
The IPI22N03S4L-15 is an N-channel enhancement mode OptiMOS-T2 power transistor designed for automotive applications. It features a PG-TO262-3-1 package with a maximum drain-source voltage of 30 V and a continuous drain current of 22 A at 25 °C. The device exhibits ultra-low on-state resistance, with a maximum RDS(on) of 14.6 mΩ at VGS=10 V. It supports a junction temperature range from -55 °C to +175 °C and includes avalanche energy ratings of 20 mJ.
Verify the specific ordering suffix AKSA1 against official Infineon documentation to confirm packaging details and marking codes. Ensure compatibility with PG-TO262-3-1 footprints during PCB layout. Confirm that the component meets the required automotive quality standards for your specific application environment before finalizing procurement.
Select this component when a 30 V N-channel MOSFET with high current capability (22 A) is required in a TO-262 style package. Consider the thermal resistance values for heat dissipation calculations. Verify gate threshold voltage requirements against your driver circuit capabilities, as the device operates effectively with standard logic-level or higher gate drive voltages.
This part belongs to the OptiMOS-T2 family, which utilizes advanced trench technology to minimize conduction losses. The IPI variant specifically denotes the PG-TO262-3-1 surface-mount package configuration within the broader IPB/IPI/IPP series sharing identical electrical specifications.
Direct replacements include IPB22N03S4L-15 and IPP22N03S4L-15, which share identical electrical parameters but differ in package type (PG-TO263-3-2 and PG-TO220-3-1 respectively). Ensure mechanical fitment and thermal interface compatibility when substituting packages.
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