IPL65R230C7AUMA1

Single FETs, MOSFETs Overview

The IPL65R230C7AUMA1 is a single N-channel CoolMOS C7 power transistor manufactured by Infineon Technologies. It utilizes the superjunction principle for high-voltage switching and is housed in a PG-VSON-4 (ThinPAK) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 650 V, a maximum on-state resistance of 230 mΩ at Tj=25°C, and a typical total gate charge of 20 nC. The device supports a continuous drain current of 10 A at 25°C case temperature and can handle pulsed currents up to 41 A. It operates within a junction temperature range of -40°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Features a dedicated driver source pin to improve gate control and reduce parasitic inductance.
• Provides increased dv/dt ruggedness for reliable operation under fast switching conditions.
• Optimized figure-of-merit combining low on-resistance with reduced gate charge and output capacitance energy.

Single FETs, MOSFETs Applications

• Power Factor Correction (PFC) stages
• Hard-switching PWM stages
• Computing and server power supplies
• Telecommunications equipment
• Uninterruptible Power Supplies (UPS)
• Solar energy systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'AUMA1' against official documentation to confirm automotive qualification status or specific tape-and-reel specifications. Ensure that the component's moisture sensitivity level (MSL 2a) and reflow soldering limits are strictly adhered to during assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when system design requires a balance between low conduction losses and fast switching speeds in a compact footprint. The ThinPAK package is suitable for applications demanding high power density. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance to ensure safe operating area compliance.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C7 series, which represents advanced superjunction technology from Infineon. The series is engineered to deliver superior efficiency compared to previous generations through optimized trade-offs between static and dynamic characteristics. The PG-VSON-4 package provides a robust solution for modern surface-mount manufacturing standards.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 650V rating, 230 mΩ Rds(on), and PG-VSON-4 footprint. Verify that alternative devices offer equivalent dv/dt ruggedness and gate charge characteristics to maintain original circuit performance without redesign.