SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
IPN50R800CEATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 7.6A SOT223. Review the specifications below when checking this part for your BOM.
The IPN50R800CEATMA1 is an N-channel enhancement-mode MOSFET from Infineon's CoolMOS CE series, utilizing superjunction technology. It features a maximum drain-source voltage of 550 V and a continuous drain current of 7.6 A at 25°C case temperature. The device has a maximum on-state resistance of 0.8 Ω at VGS=13V and ID=1.5A. Typical gate charge is 12.4 nC, with a total power dissipation of 5 W. It operates within a junction temperature range of -40°C to 150°C and is housed in a PG-SOT223 surface-mount package.
Verify the component against official datasheets to confirm specifications such as RDS(on) limits and thermal characteristics. Ensure compatibility with target operating temperatures and voltage ratings. Check for specific ordering suffixes if required by design constraints. Confirm RoHS compliance status through manufacturer documentation before integration into final products.
Select this component for cost-sensitive consumer and lighting applications requiring high efficiency. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate switching speeds and gate charge requirements against driver capabilities. Ensure the package type fits the available PCB space and manufacturing processes.
This part belongs to the CoolMOS CE family, optimized for price-performance in consumer electronics. It combines fast switching capabilities with ease of use. The series targets markets demanding high efficiency without compromising on cost-effectiveness. It represents a balance between performance metrics and manufacturing economics.
Consult official replacement lists or similar product tables in the datasheet for verified substitutes. Ensure any alternative matches critical parameters like voltage rating, current capacity, and package dimensions. Verify electrical characteristics align with original design requirements before substitution.
The maximum drain-source breakdown voltage is 500 V.
The typical gate charge is 12.4 nC.
The maximum continuous drain current is 7.6 A at a case temperature of 25°C.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.