Single FETs, MOSFETs IPN50R800CEATMA1 product image

IPN50R800CEATMA1

$0.82
  • Description:MOSFET N-CH 500V 7.6A SOT223
  • Series:CoolMOS™ CE
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3a83594f5880 Category: Brand:

  
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IPN50R800CEATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 7.6A SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPN50R800CEATMA1

  • Description:MOSFET N-CH 500V 7.6A SOT223
  • Series:CoolMOS™ CE
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):13V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 1.5A, 13V
  • Vgs(th) (Max) @ Id:3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs:12.4 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for IPN50R800CEATMA1

IPN50R800CEATMA1

Single FETs, MOSFETs Overview

The IPN50R800CEATMA1 is an N-channel enhancement-mode MOSFET from Infineon's CoolMOS CE series, utilizing superjunction technology. It features a maximum drain-source voltage of 550 V and a continuous drain current of 7.6 A at 25°C case temperature. The device has a maximum on-state resistance of 0.8 Ω at VGS=13V and ID=1.5A. Typical gate charge is 12.4 nC, with a total power dissipation of 5 W. It operates within a junction temperature range of -40°C to 150°C and is housed in a PG-SOT223 surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Superjunction structure for low losses
  • High commutation ruggedness
  • Lead-free and halogen-free construction

Single FETs, MOSFETs Applications

  • Adapters
  • Chargers
  • Lighting

Single FETs, MOSFETs Procurement Notes

Verify the component against official datasheets to confirm specifications such as RDS(on) limits and thermal characteristics. Ensure compatibility with target operating temperatures and voltage ratings. Check for specific ordering suffixes if required by design constraints. Confirm RoHS compliance status through manufacturer documentation before integration into final products.

Single FETs, MOSFETs Selection Notes

Select this component for cost-sensitive consumer and lighting applications requiring high efficiency. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate switching speeds and gate charge requirements against driver capabilities. Ensure the package type fits the available PCB space and manufacturing processes.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS CE family, optimized for price-performance in consumer electronics. It combines fast switching capabilities with ease of use. The series targets markets demanding high efficiency without compromising on cost-effectiveness. It represents a balance between performance metrics and manufacturing economics.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists or similar product tables in the datasheet for verified substitutes. Ensure any alternative matches critical parameters like voltage rating, current capacity, and package dimensions. Verify electrical characteristics align with original design requirements before substitution.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage is 500 V.

What is the typical gate charge value?

The typical gate charge is 12.4 nC.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 7.6 A at a case temperature of 25°C.

IPN50R800CEATMA1IPN50R800CEATMA1
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