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The IPP014N08NM6AKSA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 6 technology. It features a drain-source voltage (Vds) of 80 V and a continuous drain current (Id) of 279 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 1.45 mΩ at 10V gate drive. Key electrical parameters include a typical gate charge (Qg) of 79 nC and a threshold voltage range of 2.4 V to 3.5 V. It operates within a junction temperature range of -55°C to +175°C and is housed in the SuperSO8 5x6 surface-mount package.
Verify the specific suffix AKSA1 against official Infineon documentation to confirm packaging details and material content compliance. Ensure that the ordering information matches the exact part number required for your bill of materials, as variations may exist within the OptiMOS 6 family.
Select this component for applications requiring an 80 V rating with high current handling capabilities up to 279 A. The low Rds(on) of 1.45 mΩ makes it suitable for minimizing conduction losses. Consider the SuperSO8 5x6 package constraints regarding PCB layout and thermal dissipation requirements during the design phase.
This part belongs to the OptiMOS 6 series, which represents Infineon's latest generation of 80 V power MOSFETs. The series focuses on improving figure-of-merit metrics through advanced trench technology, offering enhanced performance compared to previous generations like OptiMOS 5.
Direct substitutes within the same package and specification range should be sought from the OptiMOS 6 portfolio. Verify pinout compatibility and thermal characteristics before replacing existing designs with alternative manufacturers' parts.