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IPP040N06N3GXKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 90A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPP040N06N3GXKSA1
- Description：MOSFET N-CH 60V 90A TO220-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：98 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：11000 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：188W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IPP040N06N3GXKSA1
Single FETs, MOSFETs Overview
The IPP040N06N3GXKSA1 is an N-channel enhancement mode MOSFET from the OptiMOS 3 series, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 60 V and a continuous drain current of 90 A at 25°C. The device exhibits a maximum on-resistance of 4 mΩ and operates within a temperature range of -55°C to +175°C. Packaged in a TO-220-3 through-hole configuration, it offers a power dissipation capacity of 188 W.
Single FETs, MOSFETs Feature Summary
- OptiMOS 3 technology provides optimized performance for standard switching applications.
- Enhanced thermal stability supports operation up to 175°C junction temperature.
- Low on-resistance minimizes conduction losses in power circuits.
Single FETs, MOSFETs Applications
- DC-DC converters
- Motor control systems
- Power supply units
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be restricted. Ensure storage conditions meet semiconductor handling standards to prevent damage prior to installation.
Single FETs, MOSFETs Selection Notes
Select this component when high current handling and robust thermal performance are required in through-hole designs. Compare against newer OptiMOS generations for improved efficiency if space constraints allow surface-mount alternatives. Validate gate charge requirements against driver capabilities.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's OptiMOS 3 portfolio, designed for general-purpose power switching. It utilizes silicon technology and is housed in a standard TO-220-3 package suitable for heatsink mounting. The series focuses on balancing cost and performance for industrial applications.
Single FETs, MOSFETs Replacement Considerations
Check for updated revisions such as IPP040N06N3G. Verify pin compatibility and electrical parameters before substituting with other 60V N-channel MOSFETs in the same package.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
