IPP042N03LGXKSA1

Single FETs, MOSFETs Overview

The IPP042N03LGXKSA1 is a single N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a TO-220-3 (PG-TO220-3) through-hole package designed for high-current applications. Key electrical parameters include a drain-source voltage (Vds) of 30 V and a continuous drain current (Id) of 70 A at case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 3.5 mΩ at Vgs = 10 V. Gate characteristics specify a threshold voltage (Vgs(th)) of 1 V and a total gate charge (Qg) of 18 nC. Thermal performance includes a power dissipation (Pd) of 79 W and an operating junction temperature range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• OptiMOS 3 technology provides low on-resistance and robust thermal performance.
• Logic-level gate drive capability with a low threshold voltage of 1 V.
• High avalanche ruggedness suitable for inductive load switching.
• Through-hole TO-220-3 package facilitates efficient heat sinking.

Single FETs, MOSFETs Applications

• Motor control systems
• Synchronous rectification in DC-DC converters
• Load switching for inductive and resistive loads
• Automotive power distribution units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix GXKSA1 against the manufacturer's official datasheet to confirm packaging details and compliance status. Confirm RoHS and REACH compliance requirements with the supplier. Check for obsolescence notices as this component family may have lifecycle restrictions. Ensure the ordering quantity matches the tube packaging specifications provided by Infineon. Validate that the TO-220-3 footprint aligns with the target PCB design constraints.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current handling is required. The 3.5 mΩ Rds(on) offers efficiency benefits in low-voltage, high-current circuits. The TO-220-3 package is preferred over surface-mount options for applications requiring superior thermal management via heatsinks. Consider the 1 V gate threshold for compatibility with logic-level drivers. Evaluate the 70 A current rating against peak load demands to ensure adequate safety margins.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3 product line, which represents Infineon's third-generation trench MOSFET technology. The series focuses on optimizing the figure of merit between on-resistance and gate charge. The TO-220-3 package is a standard industry form factor for medium-power discrete semiconductors. The 'G' suffix typically indicates lead-free and halogen-free compliance according to JEDEC standards.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include IPP042N03L G. Cross-family replacements must match the 30 V Vds, 70 A Id, and TO-220-3 package. Verify that alternative parts meet the 3.5 mΩ Rds(on) requirement and maintain compatible gate charge characteristics for similar switching speeds.