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IPP100N04S303AKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 100A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IPP100N04S303AKSA1
- Description：MOSFET N-CH 40V 100A TO220-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Bulk,Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id：4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs：145 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：9600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：214W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for IPP100N04S303AKSA1
Single FETs, MOSFETs Overview
The IPP100N04S3-03 is an N-channel enhancement mode OptiMOS-T power transistor manufactured by Infineon Technologies. It features a PG-TO220-3-1 package and supports a maximum drain-source voltage of 40 V with a continuous drain current of 100 A at 25°C. The device exhibits a typical on-state resistance of 2.2 mΩ at VGS=10V and ID=80A, with a maximum rating of 2.8 mΩ. It operates within a temperature range of -55°C to +175°C and has a power dissipation capacity of 214 W at 25°C case temperature.
Single FETs, MOSFETs Feature Summary
- Automotive AEC-Q101 qualified for high reliability applications
- Ultra-low Rds(on) for efficient power switching
- 100% avalanche tested for robust performance under transient conditions
Single FETs, MOSFETs Applications
- Automotive power management systems
- DC-DC converter circuits
- Motor control applications
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix AKSA1 against official documentation to confirm exact ordering details, as datasheets may list base part numbers like IPP100N04S3-03. Confirm RoHS compliance and green package status directly from the manufacturer's latest release notes or material content sheets before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring automotive-grade reliability and low conduction losses in 40V environments. Ensure thermal management strategies account for the specified junction-to-case thermal resistance. Verify that gate drive voltages remain within the ±20 V limit to prevent damage.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS-T family, designed for high-efficiency power switching. It shares electrical characteristics with IPB100N04S3-03 (SMD) and IPI100N04S3-03 (leaded), differing primarily in physical packaging. The TO-220 form factor facilitates through-hole mounting for high-current applications.
Single FETs, MOSFETs Replacement Considerations
IPB100N04S3-03 and IPI100N04S3-03 are electrically equivalent variants within the same product family, offering surface-mount and leaded options respectively.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
