IPP200N25N3GXKSA1

Single FETs, MOSFETs Overview

The IPP200N25N3GXKSA1 is an N-channel Power MOSFET from the OptiMOS 3 family, housed in a PG-TO220-3 package. It features a drain-source voltage of 250 V and a continuous drain current of 64 A at 25 °C case temperature. The maximum on-resistance is 20 mΩ at VGS=10 V and ID=64 A. Total gate charge is typically 64 nC and maximally 86 nC. Thermal resistance junction-to-case is 0.5 K/W. Operating and storage temperatures range from -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching and synchronous rectification applications
• Features excellent gate charge and on-resistance product factor
• Supports single-pulse avalanche energy operation
• Compliant with RoHS standards and halogen-free requirements

Single FETs, MOSFETs Applications

• High-frequency power switching circuits
• Synchronous rectification modules
• Industrial motor control systems
• Power supply units requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure that the procurement channel provides valid traceability data consistent with automotive or industrial grade requirements. Confirm compliance with JEDEC qualification standards relevant to the target application environment before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust 250 V blocking capability combined with low conduction losses. Evaluate thermal management strategies based on the 0.5 K/W junction-to-case resistance. Consider the total gate charge characteristics for driver selection in high-speed switching topologies. Verify safe operating area limits under pulsed current conditions.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS 3 generation of silicon power transistors manufactured by Infineon Technologies. It shares core electrical specifications with the IPB200N25N3G (PG-TO263-3) and IPI200N25N3G (PG-TO262-3) variants, differing primarily in the physical lead frame and package outline used for PCB mounting.

Single FETs, MOSFETs Replacement Considerations

Direct functional equivalents include IPB200N25N3G and IPI200N25N3G. These parts share identical electrical ratings but utilize different packages. Verify footprint compatibility and thermal interface requirements before substitution.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy rating?

The device supports a single-pulse avalanche energy of 320 mJ when driven at 47 A with a gate resistance of 25 Ω.

How does the on-resistance vary with temperature?

The drain-source on-state resistance increases significantly as the junction temperature rises from 25 °C to 175 °C, following standard positive temperature coefficient behavior for silicon MOSFETs.

What are the dynamic capacitance values?

Input capacitance is typically 5340 pF, output capacitance is typically 297 pF, and reverse transfer capacitance is typically 4 pF, measured at VDS=100 V and f=1 MHz.