IPP60R099CPAAKSA1

Single FETs, MOSFETs Overview

The IPP60R099CPAAKSA1 is a CoolMOS P7 power MOSFET designed for high-efficiency switching applications. It features a breakdown voltage of 600 V and a typical on-state resistance (Rds(on)) of 0.099 Ohms at 25°C. The device utilizes Infineon's patented trench technology to achieve low gate charge and reduced switching losses. Packaged in a TO-247-3 case, it supports continuous drain currents up to 80 A depending on thermal conditions. Key electrical parameters include a maximum gate-source voltage of ±20 V and a total gate charge of typically 65 nC.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS P7 trench technology for optimized trade-off between conduction and switching losses
• Enhanced ruggedness with high avalanche energy capability and robust short-circuit withstand time
• Low internal capacitances enabling high-frequency operation with minimal switching energy dissipation

Single FETs, MOSFETs Applications

• High-efficiency AC/DC and DC/DC converters
• Industrial motor drives and inverters
• Uninterruptible power supplies (UPS)
• Solar micro-inverters and string inverters

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including suffix AKSA1 to ensure correct packaging and tape-and-reel configuration. Confirm that the requested component matches the specific CoolMOS P7 generation, as earlier or later generations may have different electrical characteristics despite similar naming conventions. Check datasheet revisions for any updates to thermal resistance values or recommended soldering profiles prior to procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing systems requiring 600 V blocking capability with minimal conduction losses. Evaluate thermal management requirements based on the specified Rth(j-a) and Rth(j-c) values from the official datasheet. Ensure the driving circuit can handle the gate charge specifications to maintain optimal switching speeds without excessive drive current demands.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's CoolMOS P7 family, representing an evolution in superjunction MOSFET technology. It succeeds previous generations by offering lower figure-of-merit (FOM) values, which combine on-resistance and gate charge metrics. The TO-247-3 package provides a balance between high current handling and ease of mounting on heatsinks for industrial power electronics.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 600 V rating, similar Rds(on), and pinout compatibility. Verify that substitute components support the same thermal interface dimensions and mounting hole patterns. Cross-reference with Infineon's official replacement guide to ensure equivalent avalanche ratings and switching performance characteristics are maintained.