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IPP65R090CFD7XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is HIGH POWER_NEW. Review the specifications below when checking this part for your BOM.
The IPP65R090CFD7XKSA1 is a 650V CoolMOS CFD7 superjunction power MOSFET in a PG-TO220-3 package. It features a maximum drain-source breakdown voltage of 650V and a continuous drain current of 16A at 100°C case temperature. The device has a maximum on-state resistance of 90mΩ at VGS=10V and Tj=25°C, with a typical gate charge of 53nC. It supports a pulsed drain current of 107A and operates within a junction temperature range of -55°C to 150°C.
Verify the specific suffix 'XKSA1' against the manufacturer's official ordering list to confirm packaging details and RoHS compliance status. Ensure the component matches the PG-TO220-3 outline dimensions specified in the datasheet before finalizing procurement orders.
Select this component for designs requiring high efficiency in soft-switching applications. Consider the 650V rating and 90mΩ RDS(on) for balancing conduction and switching losses. Evaluate thermal management requirements based on the 0.98°C/W junction-to-case thermal resistance for optimal performance.
This part belongs to the Infineon CoolMOS CFD7 family, which extends the 650V voltage class offering. It serves as a successor to the 650V CoolMOS CFD2 series, providing improved switching performance and superior hard commutation robustness for industrial and automotive-grade applications.
The datasheet identifies the IPP65R090CFD7 as a direct successor to the 650V CoolMOS CFD2 series. Verify pinout compatibility and thermal characteristics when replacing older CFD2 variants.
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