IPP65R095C7XKSA1

$4.09

Description：MOSFET N-CH 650V 24A TO220-3
Series：CoolMOS™ C7
Mfr：Infineon Technologies
Package：Tube

SKU:b59cc8e63c58 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPP65R095C7XKSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 650V 24A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPP65R095C7XKSA1

Description：MOSFET N-CH 650V 24A TO220-3
Series：CoolMOS™ C7
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：95mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id：4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs：45 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2140 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：128W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for IPP65R095C7XKSA1

IPP65R095C7XKSA1

Single FETs, MOSFETs Overview

The IPP65R095C7XKSA1 is a single N-channel enhancement mode MOSFET from the Infineon CoolMOS C7 series, utilizing superjunction technology. It features a maximum drain-source voltage of 650 V and a typical on-state resistance of 84 mΩ at 25°C. The device supports a continuous drain current of 24 A at 25°C case temperature and handles pulsed currents up to 100 A. Key dynamic parameters include a total gate charge of 45 nC, turn-on delay of 14 ns, and fall time of 7 ns. It operates within a junction temperature range of -55°C to +150°C and is housed in a PG-TO 220 package.

Single FETs, MOSFETs Feature Summary

Superjunction structure providing high dv/dt ruggedness and low switching losses
Optimized figure of merit for RDS(on) multiplied by Qg and Eoss
Qualified for industrial grade applications per JEDEC standards
Lead-free plating with halogen-free mold compound

Single FETs, MOSFETs Applications

Power Factor Correction (PFC) stages
Hard switching PWM stages
Computing power supplies
Server power systems
Telecom equipment
Uninterruptible Power Supplies (UPS)
Solar energy inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XKSA1 against official documentation to confirm the exact tube packaging configuration and marking details. Ensure that the procurement specifications align with the required industrial grade qualification and environmental compliance standards defined in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage blocking capability combined with low conduction losses. The superjunction architecture makes it suitable for high-frequency operation where reduced gate charge minimizes driver requirements. Consider the thermal resistance characteristics for appropriate heatsinking solutions.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS C7 family, which represents advanced superjunction MOSFET technology from Infineon Technologies. The series is engineered to deliver superior efficiency and reliability compared to previous generations, specifically targeting high-power density applications in industrial and telecommunications sectors.